2016 International Workshop on Nitride Semiconductors (IWN 2016)
Abstract
2016 International Workshop on Nitride Semiconductors (IWN 2016)SOWFunds are provided to support the 2016 International Workshop on Nitride Semiconductors. The performer is the Materials Research Society.This funding increment of $10K fully funds the grant.This funding will partially support the 2016 International Workshop on Nitride Semiconductors to be held from October 2nd through October 7th, 2015, at the Hilton Orlando Buena Vista Hotel in Orlando, Florida, USA. The primary goal of this workshop is the promotion of science by providing a forum for exchange of knowledge among scientists and engineers working in the field of III-nitride semiconductor materials and devices.ObjectiveThe objective of this workshop is the promotion of science by providing a forum for exchange of knowledge among scientists and engineers working in the field of III-nitride semiconductor materials and devices.ApproachONR funding will be applied to subsidize the conference attendance costs for graduate students and young faculty who are presenting papers at the conference. Preference will be given first time attendees and underrepresented groups.Merit / RelevanceAdvancements in group~III nitride compound semiconductor systems are creating a tremendous impact on high power microwave and power control devices incorporated in Navy systems. This conference is one of two major forums for the research community to collaborate and present the latest research results. IWN is expected to have attendance of approximately 900 including attendees from Americas, Europe and Asia. All types of research institutions (academia, government research institutes and industrial laboratories) will be represented.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 30, 2016
- Source ID
- N000141612845
Entities
People
- Tomás Palacios
Organizations
- Materials Research Society
- Office of Naval Research
- United States Navy