Probing the Performance Limit of High Speed Graphene Transistors with an Environmentally Controlled RF Probe
Abstract
Funding is provided for the acquisition of an environmentally controlled RF probe station and measurement system for probing the fundamental performance limit of transistors made of graphene and other two-dimensional (2D) materials (e.g., MoS2). The establishment of the proposed measurement system offers the critical tool for accomplishing the research goals outlined in two previously funded ONR projects. With the highest carrier mobility, carrier saturation velocity and single atomic thickness, graphene is emerging as an attractive material for ultra-high speed radio frequency (RF) electronics. However, the fabrication of high speed graphene transistors is of significant challenge since the conventional material integration and electronic fabrication process can often introduce severe defects in the monolayer graphene lattices to degrade its electronic performance, or result in non-ideal device geometry with excessive parasitic capacitances or access resistances. We have recently developed a self-aligned approach to address these challenges and enable graphene transistors with sub-100 nm channel length and unprecedented speed (with the projected cut-off frequency exceeding 1 THz). On the other hand, it is non-trivial to probe the fundamental RF performance limit of these aggressively scaled graphene transistors because the intrinsic large surface area associated with nanoscale graphene devices make them highly susceptible to environmental changes. Additionally, to access the ultimate RF performance limit of the graphene transistors requires the application of high bias voltage and high current, which can often lead to premature breakdown of the devices without proper environmental control. The DURIP support will be used to acquire an environmentally controlled RF probe station and measurement system for probing the fundamental performance limit of transistors made of graphene and other two-dimensional (2D) materials (e.g., MoS2). The establishment of the proposed measurement system offers the critical tool for accomplishing the research goals outlined in two previously funded ONR projects. Additionally, we will collaborate with UCLA Center for High Frequency Electronics, to make this new capability accessible to all researchers on campus (e.g., the STARnet FAME program funded partly by DARPA) for the characterization of diverse electronic devices, particularly unconventional devices enabled by low-dimensional materials, under controlled environment. It can therefore greatly enhance the research and educational opportunities in relevant areas.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Nov 23, 2016
- Source ID
- N000141612923
Entities
People
- Xiangfeng Duan
Organizations
- Office of Naval Research
- United States Navy
- University of California, Los Angeles