Gate-Driver Unit for Gen3 10kV, 240A SiC MOSFET Power Modules
Abstract
The tasks and corresponding schedule for the project are:Task 1: design, construction and testing of ultra-low input-output capacitance 10 W powersupply with 20 kV insulation. [M01~04]Fig. 1 CPES gate driver unit recently developedfor Gen2 10 kV, 120 A, SiCMOSFET modules.Task 2: design, construction and functional testing of gate-driver circuit with integratedcurrent-sensor and required functionality, customized to drive the Gen3 Cree-Wolfspeed10 kV, 240 A SiC MOSFET power module. [M03~09]Task 3: static, dynamic and continuous testing of gate-driver circuit with Gen3 Cree-Wolfspeed 10 kV, 240 A SiC MOSFET power module. [M10~12]Task 4: project management and reports. [M01~12]
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 30, 2016
- Source ID
- N000141612939
Entities
People
- Rolando Burgos
Organizations
- Office of Naval Research
- United States Navy
- Virginia Tech