Reliability Prediction of Wide Band-Gap Semiconductor Power Devices
Abstract
We will work with the research team to develop proper reliability physics models forthese and other potential failure mechanisms. We will use our power devicecharacterization equipment capable of 50A pulsed sourcing and our resources of highand low temperature device characterization and burn-in. We will do low temperaturestress to expose hot carrier effects as well as low-voltage high temperature stress toexpose other defect related effects. At the moment, we are developing themethodology for lateral HEMT devices until the vertical devices becomecommercially viable. Of course, our aim is to investigate also the vertical devices, butin the mean time, we are working with all the most useful material we can find.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 30, 2016
- Source ID
- N000141612943
Entities
People
- Joseph Bernstein
Organizations
- Ariel University
- Office of Naval Research
- United States Navy