Broadband Wafer-Probe Millimeter-Wave Sources Using Hybrid GaAs-on-Silicon Integration
Abstract
The inexorable push to higher throughput processors as well as the demand for ever-increasingdata rates for transfer of information to both fixed and mobile platforms has presented significantchallenges to state-of-the-art technology. One possible solution that holds great promise formeeting these challenges is heterogeneous silicon photonics. By transmitting information onoptical wavelength carriers, the traditional metal interconnects (with their associated bandwidthand insertion loss limitations) can be replaced with low-loss optical waveguides, high data-ratemodulators, and carrier aggregation with associated THz-level bandwidths. However the abilityto test such large bandwidth systems and devices is limited by the instantaneous bandwidthavailable from standard electronic test and measurement equipment. Frequency multipliers based on Schottky barrier diodes represent the most commonlyusedsolid state device technology for generating power at frequencies ranging from 100 GHzto 1 THz. The design of varactor and varistor multipliers is a well-established topic and thefundamental issues have been understood since the work of Penfield and Rafuse. Fromthis foundation a number of preferred multiplier circuit topologies have emerged - notablythe balanced doubler and tripler configurations that employ anti-parallel or anti-series connecteddiodes. These circuit configurations have been widely adapted due to their inherent isolation ofeven and odd-order harmonics.One significant limitation to the development of broadband multipliers is the bandwidthlimitations of typical interconnects used for millimeter-wave instruments. Commerciallyavailable coaxial connectors are available up to 110 GHz while rectangular waveguideconnectors are limited to roughly 40% fractional bandwidth in order to prevent multi-modeoperation. However recent developments at UVA in both micromachined waveguide probes,fabricated using silicon-on-insulator (SOI) processing, as well as heterogeneous integration ofGaAs Schottky diodes onto silicon substrates will enable the development of broadbandmultipliers with 1.0 mm coax inputs and CPW probe tip outputs as described in this proposal.The CPW probe tip employed in our wafer probe architecture is inherently broadband with UVAdemonstrated upper frequency limits of over 1 THz. Therefore, this research will focus on thedesign and development of prototype broadband sources through heterogeneous integration ofGaAs Schottky diode multipliers onto a micromachined silicon probe membrane chip.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 23, 2016
- Source ID
- N000141613048
Entities
People
- Robert Weikle
Organizations
- Office of Naval Research
- United States Navy
- University of Virginia