Modeling of GaN Transistors
Abstract
The work envisioned by this proposal is expected to require approximately twenty-four months tocomplete. The recommended period of performance for this project is September 1, 2016 throughAugust 31, 2018. The project will be divided into three phases, Task A, Task B, and Task C. Thesethree phases are independent of each other, hence their designation. Task A will take the first yearof the performance period. Task B will require half the second year of the performance period.Due to the complexity of the work in Task C, it will require the entire 2 years of the performanceperiod. The attached budget shows that the project will support 2 graduate students. Both studentswill dedicate their full time to the project. A project timeline outlining these milestones/tasks isgiven in Fig. 7.Program milestones have been assigned for Task A, Task B, and Task C and are shown in Table1, Table 2 and Table 3 respectively. A Program Review will be scheduled with the Program Officerevery 6 months, or every 3 months as needed. This has been discussed with the Program Officer.4.1. Task A. Lateral and Vertical Device Model Development: September 2016 ~August 2017In this portion of the project, the tasks outlined in Section 2a of this proposal will be performed.Lateral and vertical GaN device models will be developed in order to project the performance offuture versions of high voltage GaN FETs. Both students will dedicate all of their efforts to thisportion of the project.4.1.1. Task A. 1. Lateral Device Model Development: September 2016 ~ February2017In this portion of the project, lateral GaN device models will be developed. This device modeldevelopment will consists of two 3-month phases. From September 2016 until November 2016,the physics-based models of the GaN devices will be developed. From December 2016 to February2017, the physics-based models will be used to implement a circuit simulation model of the GaNdevice. This circuit simulation model will be used to assess the performance of the device invarious power electronic circuit topologies.4.1.2. Task A. 2. Vertical Device Model Development: March 2017 ~ August 2017.In this portion of the project, vertical GaN device models will be developed. This device modeldevelopment will consists of two 3-month phases. From March 2017 until May 2017, the physicsbasedmodels of the GaN devices will be developed. From June 2017 to August 2017, the physicsbasedmodels will be used to implement a circuit simulation model of the GaN device. This circuitsimulation model will be used to assess the performance of the device in various power electroniccircuit topologies.4.2. Task B. Comparison Between EPC GaN Devices and Transphorm GaNDevices: September 2017 ~ February 2018In this portion of the project, the tasks outlined in Section 2b of this proposal will be performed.A boost converter consisting of two 300 V EPC devices will be compared against a boost convertercontaining one 600 V Transphorm device. This analysis will lay the foundation for comparing theperformance of next generation higher voltage GaN devices. Both students will dedicate all oftheir efforts to this portion of the project.4.2.1. Model Development of EPC and Transphorm Devices: September 2017 ~November 2017In this portion of the project, circuit simulation device models will be developed for both the EPCand Transphorm GaN devices. As newer high voltage iterations of these devices become available,newer models can be developed. This will facilitate developing scaling rules which can be used toproject the performance of even higher voltage GaN devices not available.4.2.2. Experimental Comparison of EPC and Transphorm Devices: December 2017~ February 2018In this portion of the project, the experimental benchmark test between the two configurationsshown in Fig. 4 will be performed. Two low voltage EPC devices will be used to switch in a boostconverter (for example) by stepping up an input voltage of 150 V to 300 V. In a separate converter,one hi
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Nov 23, 2016
- Source ID
- N000141613104
Entities
People
- Raghav Khanna
Organizations
- Office of Naval Research
- United States Navy
- University of Toledo