Experimental Comparisons of SiC JFETs and SiC MOSFETs in a PEBB based Converter
Abstract
Milestone 1: Device under test (DUT) selected. Gate-drive circuit designed for DUT.Milestone 2: Testbed designed and assembled. Both hardware and software are ready.Milestone 3: Experimental results of dc-dc mode, inverter/rectifier mode, reactive power flow mode are obtained.Milestone 4: Comparison matrix of DUT is provided with device recommendation for different operation mode.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Nov 23, 2016
- Source ID
- N000141613191
Entities
People
- Hui Li
Organizations
- Florida State University
- Office of Naval Research
- United States Navy