Feasibility Study and Demonstration of Photodetectors with Giant Gain for High Sensitivity Imaging and Sensing
Abstract
This program focuses on the underlying fundamental physics of recently observed giant gain in photodiodes when the p/n junction contains a sufficient amount of compensating impurities. The external quantum efficiency can increase drastically to achieve photoresponse with a gain well over 1000 at low bias voltages (between 1 to 5 V). Such a gain was observed not only in Si, but also in GaAs compensated p/n junction devices. Two theoretical models are proposed to explain the effect. This program will carry out experiments to validate those models.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 26, 2018
- Source ID
- N000141613206
Entities
People
- Yong-hang Zhang
Organizations
- Arizona State University
- Office of Naval Research
- United States Navy