Optimization of the Gate Barrier Layers in N-Polar GaN MISHEMTs for Improved Device Performance
Abstract
Nitrogen-polar (N-Polar) deep recess metal-insulator-semiconductor high electron mobilitytransistors (MISHEMTs) contain two layers in the gate barrier: a gate dielectric and an aluminumgallium nitride (AlGaN) cap. In this work, the optimization of these layers will be investigated todevelop a robust gate barrier providing improved device performance for Ka-band and higherfrequencies of operation. The growth of metal-organic chemical vapor deposition (MOCVD)dielectrics on gallium nitride (GaN) has advanced in recent years and have shown great promiseas a gate dielectric. In particular, aluminum oxide and aluminum silicon oxide deposited byMOCVD will be studied when applied to N-Polar (Al)GaN. Additionally, AlGaN cap layershave been shown to decrease gate leakage in planar N-Polar MISHEMTs. In this work we alsopropose to explore the design space and functionality of the AlGaN cap when applied to the NpolarDeep Recess (NPDR) device structure where a relatively low 27% Al composition AlGaNcap has been used to date.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 04, 2017
- Source ID
- N000141712103
Entities
People
- Umesh Mishra
Organizations
- Office of Naval Research
- United States Navy
- University of California, Santa Barbara