Investigation of N-Polar GaN MISHEMT Channel Design for Improved W-Band Performance
Abstract
Nitrogen-polar (N-Polar) deep recess metal-insulator-semiconductor high electron mobilitytransistors (MISHEMTs) devices have recently demonstrated record performing W-band poweramplification. To extend this performance, the design of the channel layer will be explored toreduce the vertical electric field, improve the electron mobility, and increase the two-dimensionalelectron gas charge density. With these improvments, enhanced electrostatic control can bepursued by further vertical and lateral scaling of the transistors through exploration of the designspace and optimization of established growth and fabrication processes. All benefits will result inan improved device performance at 94 gigahertz.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 04, 2017
- Source ID
- N000141712106
Entities
People
- Umesh Mishra
Organizations
- Office of Naval Research
- United States Navy
- University of California, Santa Barbara