Co-development of an Environment-Controlled Atomic Layer Deposition Cluster System for Epitaxial Dielectric Integration on GaN and Beyond
Abstract
Funds are provided for the co-development of an Atomic Layer Deposition (ALD) and Atomic Layer Epitaxy (ALE) dielectric system, between Purdue and Arradiance, Inc., that will permit the growth of novel epitaxial dielectrics for ultra wideband gap semiconductor research; it will provide the laboratory with the capability to permit novel growth, surface analysis, and device fabrication and characterization to be performed.Abstract:GaN-based power electronics, and particularly high-electron-mobility-transistors (HEMTs), have recently attracted enormous attention for their potential to enable high frequency, high power, high voltage switching and low noise applications. However, due to their limitedSchottky barrier height and width, these devices suffer from high gate leakage (Ig), resulting in a low forward gate bias swing and poor off-state performance. Recently, through ONR support as co-PIs in Purdue~s recently established NEPTUNE program, we demonstrated that high performance metal-oxide-semiconductor HEMTs (MOSHEMTs) [7] with a thin oxide layer, epitaxially deposited via atomic layer deposition (ALD) between the gate and the barrier cansolve the aforementioned two problems, leading to a large number of impressive device characteristics, especially high power efficiencies even at high frequency operation, and low parasitic heating, enabling higher peak driving voltages and input powers to be employed.To extend these successes much further, and enable a range of related applications, this proposal seeks funding to co-develop a brand-new environmentally-controlled ALD cluster system in collaboration with Arradiance, Inc. which can grow epitaxial dielectric on wide bandgap semiconductors and beyond (such as ~-Ga2O3) with unprecedentedly high quality. To ensurefuture usage outside of the laboratory, it is critical to develop this unique atomic layer epitaxy (ALE) process using commercially-available ALD systems and precursors, instead of using homemade systems and precursors. Considering the existing strong research programs on ALD-based high-k/III-V and III-N devices currently supported at Purdue through DoD grants from ONR, AFOSR, and DTRA, this unique growth system being proposed will be the centerpiece of anextensive fabrication and analysis laboratory enabling growth and characterization experiments that cannot be performed elsewhere. The proposed ALD cluster system will also become a national resource for growing novel epitaxial dielectrics for ultra wide bandgap semiconductor research that directly serves pressing DoD needs.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 03, 2017
- Source ID
- N000141712298
Entities
People
- Peide Ye
Organizations
- Office of Naval Research
- United States Navy
- University of Virginia