Epitaxial III-Nitride Semiconductor/Superconductor Heterostructure Electronics
Abstract
Epitaxial III-Nitride Semiconductor/Superconductor Heterostructure Electronics: The PI Dr. Jena at Cornell and his collaborator Dr. David Meyer at NRL have recently discovered robust superconductivity in epitaxial few-nm thin single-crystal Nb2N/AlN/GaN quantized heterostructures. These heterostructures are grown by Molecular Beam Epitaxy, with precisely controlled layer thicknesses and compositions. This is the first realization of superconductivity in all-epitaxial metal/semiconductor heterojunctions. The underlying Gallium Nitride based semiconductor platform powers a successful active microwave electronics platform today. The proposed project aims to seize the unique opportunity of epitaxial integration of superconductor layers with Gallium Nitride semiconductor heterostructures a) to understand the physics of electron transport across MBE-grown epitaxial superconductor/semiconductor heterojunctions, and b) to implement and demonstrate all-epitaxial tunneling superconducting Josephson junctions for microwave qubit based quantum computation, and explore the unique Nb2N/GaN/AlN platform for the realization of precision on-chip microwave clocks.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 10, 2017
- Source ID
- N000141712414
Entities
People
- Debdeep Jena
Organizations
- Cornell University
- Office of Naval Research
- United States Navy