Low Excess-Noise Avalanche Photodetectors with Superlattices (LEAPS)
Abstract
Low Excess-noise Avalanche Photodetectors with Superlattices (LEAPS)Project abstractWe propose the research and development of short wave infrared (SWIR, 1.5-3um) Low Excess noise Avalanche Photodetectors with Superlattices (LEAPS) in support of HEL-JTO~s mission to advocate HEL transition and development, stimulate inter-service research and educate the next generation technical, policy and program leaders. These next generation high-gain, low-noise devices based on the III-V technologies will have uniform gain across the array and lower costcompared to the current state of the art (SoA). Expected performance metrics include multiplication gain (M) > 30, dark current < 300 pA and excess noise factor=1.05-1.1, quantum efficiency > 0.6 and frame rate up to 20KHz at a wavelength of 1.55 ~m and operatingtemperature of 250 K. In addition, we will demonstrate a response uniformity of these arrays on <5% (raw), which is 4X better than SoA short-wavelength infrared (SWIR) avalanche photodetectors (APDs) based on HgCdTe. By providing better uniformity than the SoA in a compact, near-room-temperature, solid-state imager, these next generation detectors and arrays will provide the ability to image and track targets in deep turbulence for HEL-JTO~s Advanced Beam control for Locating and Engaging (ABLE) program. The base period will focus ondesign, growth, fabrication of Type II superlattice (T2SL) APDs using PIN designs while the option period will focus on a separate absorption and multiplication (SAM) heterostructure design. A technology demonstration of LEAPS focal plane array (FPA) in collaboration withMIT-LL (GFE) and L3-Communications is planned toward the end of the option phase.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 05, 2017
- Source ID
- N000141712440
Entities
People
- Sanjay Krishna
Organizations
- Office of Naval Research
- Ohio State University
- United States Navy