High-mobility ferroelectrics for polarization-controlled devices
Abstract
High-mobility ferroelectrics for polarization-controlled devicesA non-volatile transistor holds promise for revolutionizing electronics and sensing applications. One potential materials platform that can be used to develop this device involves ferroelectrics incorporated into all-oxide heterostructures, with the ferroelectric imprinting non-volatile states in a transistor. One advantage of these materials systems is that conducting perovskite oxides are structurally and chemically compatible with several ferroelectric oxides that have superior performance, such as those in the PbZrxTi1-xO3 family. One drawback, however, for conducting perovskite oxide channels is that their mobility is smaller than those of conventional semiconductors; searching for higher mobility alternatives is a grand challenge for the field ofoxide electronics. The approach in this proposal consists of growing thin film oxide heterostructures that have been predicted by first principles theory to have superior electronic mobilities. These heterostructures, once grown, will be characterized for their electronicperformance. The microscopic mechanism for conductivity will be determined using a combination of characterization techniques that determine the physical and electronic structure of atomically abrupt interfaces with picoscale resolution. The characterization techniques to be used are synchrotron based x-ray diffraction, photoemission, atomic force microscopy, andelectrical transport measurements. The materials and devices studied here theoretically and experimentally will enable the fabrication of electronic circuits that can significantly reduce standby power consumption of portable electronics. Devices with reduced power consumption are required for sensors and electronics that rely on energy harvesting for operation and aresuited for integration into systems to support adaptive persistent surveillance.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 05, 2017
- Source ID
- N000141712446
Entities
People
- Charles Ahn
Organizations
- Office of Naval Research
- United States Navy
- Yale University