Large size wafers of erbium doped GaN crystals as high energy laser gain medium
Abstract
Large size wafers of erbium doped GaN crystals as high energy laser gain mediumProject Abstract:Building on our progress made duri"ng the JTO HEL-MRI supporting period over last 4 years, we propose to scale up the synthesis of Er:GaN bulk crystals to 6-inch wafer"s. This will allow the realization of laser structures with dimensions sufficient for delivery to DOD labs and industries for testing. Success will enable technology transition into disk and planar waveguide HEL andilluminator systems. Er:GaN gain material is expected to provide higher lasing power than Nd:YAG due to its excellent thermal-mechanical properties and improved eye-safety and atmospheric transmittance.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 05, 2017
- Source ID
- N000141712531
Entities
People
- Hongxing Jiang
Organizations
- Office of Naval Research
- Texas Tech University System
- United States Navy