Terahertz Frequency Extenders for Non-contact, On-chip Metrology of mmW and THz Devices and Integrated Circuits
Abstract
Project Summary We recently demonstrated a novel non-contact probing approach for wafer-scale on-chip characterization of mmW and T"Hz electronics (Caglayan, Trichopoulos, and Sertel, ~Non-Contact Probes for On-Wafer Characterization of Sub-millimeter Wave Devices"" and Integrated Circuits~, IEEE Transactions on Microwave Theory and Techniques, vol. 62, no. 11, pp. 2791~2801, November 2014). Unl""ike conventional contact-based probes, our non-contact test-bed is free from probe vibration, poor-contact, and wear-and-tear issues"" and can be readily scaled for metrology well above 1 THz. With this proposal, we plan to acquire the 750-1100GHz band frequency ext""ender pair and the associated 4-port N5242A 26.5 GHz PNA-X network analyzer to demonstrate, for the first time, non-contact, on-chip"", S-parameter characterization of THz electronics. The 4-port PNA-X proposed here will also enable us to perform, for the first tim""e, nonlinear and modulated measurements of THz devices.Such accurate and repeatable metrology systems are badly needed to extend t"he operation frequencies of modern electronics beyond 1THz. Our new system allows for unique metrology capabilities in a most elegan"t fashion. As opposed to making physical contact with the test chip, we developed a quasi-optical wireless link between the frequenc"y-extender~s ports and planar monolithic antennas on the test chip that interface with the test device. This link is established with the aid of a hemispherical lens placed under the test wafer and the port signals are coupled onto the test device environment thro"ugh the substrate using monolithic on-chip antennas. As such, no contact is required with the test chip during characterization, eli"mination potential for damage. The on-chip THz antennas are monolithically fabricated as part of the co-planar waveguide environment of the test structure and have been designed to achieve excellent impedance match to the input and output ports of the test electronics and pattern-matched to the quasi-optical link to carry signals in and out of the frequency extender modules. The accuracy and repeatability performance of our non-contact THz probes are discussed in detail below.This new metrology method has been developed and optimized over the past 4.5 years under the DATE MURI Program from ONR with the main focus of developing novel III-N based devi"ces to achieve gain beyond 1THz. Supporting this ambitious program, we have already successfully demonstrated device measurement cap""ability up to 750GHz using our non-contact probes and available frequency extenders. We have, for the first time, measured and valid""ated the external paratisitics of typical 2-gate-finger HEMT layouts up to 750GHz. With the requested equipment, we will expand our"" unique metrology approach to 1.1THz band and demonstrate, for the first time, fully-automated non-contact device and IC characteriz"ation beyond 1THz.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jun 09, 2017
- Source ID
- N000141712582
Entities
People
- Kubilay Sertel
Organizations
- Office of Naval Research
- Ohio State University
- United States Navy