Selective Area Growth by PAMBE as an Enabling Technology for GaN Vertical Epitaxial Processing: Epitaxial Regrowth, n+/p-Doping, Smooth Trench Etching, and Low-Resistivity Ohmic Contacts
Abstract
This proposed work is to utilize and further develop the selective area growth (SAG) technologyby plasma assisted molecular beam ep"itaxy (PAMBE), pioneered by the PI~s group at theUniversity of Illinois, as an enabling technology for GaN vertical epitaxial proce"ssing (GVEP).This PAMBE-SAG technology is not only unique but also most suitable for GVEP: it is uniquebecause such SAG is not pos"sible with any other existing state-of-the-art growth technologiesincluding metal-organic chemical vapor deposition (MOCVD), hydrid""e vapor phase epitaxy(HVPE), and gas-source MBE (GAMBE); and it is most suitable for GVEP because it allows oneto selectively grow""/regrow an epitaxial GaN layer, achieve n-/p-doping, etch trenches withsmooth surface, and achieve metallization at a low temperatu""re avoiding alloying thus achievinglow-resistivity ohmic contacts. For these reasons, PAMBE-SAG may very well prove to be thesingl"e most enabling technology for GVEP. The proposal objectives are: 1) to develop PAMBESAGas an enabling technology for selective epi"taxial regrowth, n+/p-doping, smooth trenchetching, and low-resistivity alloyed/non-alloyed ohmic contact formation to facilitate G""VEP, 2) toperform detailed microanalysis and characterization of the materials and device structuresproduced by PAMBE-SAG to asses""s its full capabilities and limitations for GVEP, and 3) to usePAMBE-SAG to process and demonstrate high-performance and reliable G""aN vertical powerelectronic devices (GVPDs), especially MPS (Merged PiN Schottky) diode, which will make themost of PAMBE-SAG tech"nology for the fabrication. Selective-area processing is anindispensable technology for the fabrication of high-performance GVPDs." However, viableselective-area processing has been lacking to date, hampering the development of capabilities tohandle high voltag""es of 1.2kV-10kV that are most suitable for meeting the needs of the navy forpower supplies, ship propulsion, motor drives, and gri""d. Leveraging the pioneering data base andexpertise of the PI~s research team pertaining to GaN-PAMBE and SAG, this work proposes t"odo a systematic in-depth investigation of PAMBE-SAG as an enabling technology fordevelopment of high-performance GVPDs.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 07, 2017
- Source ID
- N000141712681
Entities
People
- Kyekyoon Kim
Organizations
- Office of Naval Research
- United States Navy
- University of Illinois Urbana–Champaign