HPM Resistant Optical Interconnects for Robust Integrated Electronics
Abstract
Microprocessors are becoming ubiquitous to virtually every aspect of our lives. We rely on thesedevices in some of our most important infrastructure. Future innovations such as smart-gridelectrical distribution systems will leave us even more dependent on microprocessors to provideour basic energy and transportation needs. This dependence makes us more vulnerable to attacksthat undermine this infrastructure by disabling the computers that are the brains of the system. Ourmilitary is also becoming highly dependent on m"icroprocessors for virtually all facets ofoperations. A good example is the new F-35 joint strike fighter, which depends on real-ti"mecomputerized feedback control for even basic functions such as maintaining level flight.The rapid penetration of microprocessors" leaves much of our important infrastructure vulnerableto directed energy (DE) attacks, particularly in the form of high power micr"owave (HPM). Modernelectronic systems consist of millions of nanoscale transistors operating within the nodes of anextraordinarily dense communications network. There are two fundamental characteristics ofelectronic systems that govern DE/HPM susceptibility: 1)" device nonlinearity and 2) metallicinterconnects and bus structures. We seek to address the second issue. Recently, it has been sh"ownthat high power microwave (HPM) radiation couples to circuits primarily via the ubiquitousconductive loops formed by bus wires and the ground planes of the network. This couplingmechanism is most severe in chip-to-chip and systems interconnects due to the s"ignificantly largerinduction areas involved. Such vulnerability has been shown to cause complete failure ofelectronic components," which is of significant concern for applications demanding high reliability.We propose to develop HPM robust computer processors by replacing core-to-core electricalinterconnects with optical interconnects (OIs). OIs are composed of purely dielectric materials"that are highly electrically resistive and therefore significantly reduce HPM coupling, but are alsohighly transparent to optical s""ignals enabling efficient core-to-core communication. In addition tohigh HPM resistance, OIs could reduce power dissipation and inc""rease computational bandwidth,making them a promising technology for applications demanding a high degree of reliability andperfor"mance.We will develop OIs using silicon nitride (SiN) and silicon (Si) photonic structures coupled to twodimensional electronic materials. SiN and Si are ideal material system for OIs due their highrefractive index and low absorption over a wide wavelength range. They are also fully CMOScompatible and can be deposited and patterned using the same processing tools used to makeCMOS electric"al circuits. In order to generate, route, and detect light we will couple SiN to twodimensional monolayer materials such as WSe2 an"d black phosphorous. These materials canabsorb and emit light and also have relatively high carrier mobility which is useful for ef"ficientinjection and extraction of electrons and holes. Furthermore, because they are composed of asingle atomic layer, they are e"xpected to be almost non-responsive in the microwave frequencyrange. Using this novel combination of photonics and monolayer electr"onics we will developoptical transmitters and receivers, and develop fabrication approaches to integrate many deviceson a chip. We" will also investigate the nonlinear and HPM properties of these materials and studytheir feasibility for HPM mitigation. This research could enable energy efficient integratedprocessors that are robust to DE energy attacks.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 01, 2017
- Source ID
- N000141712720
Entities
People
- Edo Waks
Organizations
- Office of Naval Research
- United States Navy
- University of Maryland