Energy Harvesting, Structural Monitoring Sensor Based on Corrugated Atomically-thin Semiconductors
Abstract
Task 1. Fundamental Understanding of Built-in Strain and Strain Rate on Flexoelectricityof a Corrugated Atomically-thin Semiconduct"or (Year 1)The PI will elucidate the linkage between corrugation morphology, built-in strain and straingradients, and the resultan""t enhancement in flexoelectric response via a combination of imaging,spectroscopic and scanning probe techniques.Task 1.1 Investig"ate how built-in strain and strain gradient of corrugated atomically-thinsemiconductors affect the flexoelectricity (Months 1-8)Task 1.2 Study how temporal strain rate influences the flexoelectricity of an atomicallythinsemiconductor (Months 1-8)Task 1.3 Determine and explore the optimal parameter space of built-in strain and strainrate for higher flexoelectricity (Months 9-12)Task 2. De"velopment of a High-strain, High-sensitivity, Energy Harvesting, StrainMonitoring System based on Corrugated Atomically-thin Semico""nductors (Year 2)The PI will develop SHM devices that will conform to irregular, curved surfaces usingatomically-thin MoS2 to achi"eve the ultimate limit of device miniaturization as well as highflexoelectric sensitivity to applied strain in multi-axis configura"tions. Furthermore, fullyintegratedstrain monitoring devices with radio-frequency identification communicationcapabilities will be"" developed.Task 2.1 Fabrication of corrugated, stretchable, energy harvesting, strain monitoringsensor device (Months 13-20)Task"" 2.2 Investigation of multi-axis, high-sensitivity, energy harvesting, strainmonitoring capability (Months 13-20)Task 2.3 Integrat""ion of strain monitoring sensors with stretchable/flexible radiofrequencyidentification for stand-off, energy harvesting, strain mo""nitoring system(Months 17-24)Task 3. Development of a High Temporal Strain Rate, Energy Harvesting, VibrationMonitoring System ba"sed on Corrugated Atomically-thin Semiconductors (Year 3)The PI will develop the energy harvesting and vibration monitoring capabilities by testing highflexoelectric vibration sensor devices under dynamic and cyclic loading with broad frequency andamplitude mon"itoring (from Hz to kHz range). In addition, the fully-integrated vibrationmonitoring devices with radio-frequency identification c"ommunication capabilities will bedeveloped.Task 3.1 Fabrication of highly anisotropic corrugations of atomically-thin semiconducto"rfor higher flexoelectricity (Months 25-32)Task 3.2 Investigation of energy harvesting, vibration sensing capability at a widefre"quency of vibration (Months 25-32)Task 3.3 Integration of vibration monitoring sensors with stretchable/flexible radiofrequencyide"ntification for stand-off, energy harvesting, vibration monitoring system(Months 29-36)
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 29, 2017
- Source ID
- N000141712830
Entities
People
- SungWoo Nam
Organizations
- Office of Naval Research
- United States Navy
- University of Illinois Urbana–Champaign