Complex Two-Dimensional Materials for Emergent Electronics
Abstract
Title: Complex Two-Dimensional Materials for Emergent ElectronicsObjective:The research objective is to create emergent electronics by experimentally exploring complex materials in the two-dimensional limit.Approach:To probe these questions PI proposes experimental campaigns that combine the synthesis and measurement of exotic candidate materials in device form. A focus of the measurement effort is on realizing these systems in the 2D limit and manipulating them with electrostatic and electrochemical means. Additiona"l collaborative work in advanced crystal growth, scanningtunneling microscopy, photoemission, and microwave spectroscopy are also k"ey to furthering these aims. Collaboration with leading theoretical groups in topology and first principles calculations are also planned.SOW:Task I Complex Analogs of GrapheneDevice Fabrication of Bi14Rh3I9 single crystals.Use of chemically doped single crystals if needed to reach bulk band gap. Collaboration with L. Fu to model new 2D QSH phase and device geometries for interface with symmetry breaking. Collaboration with A. Tsukazaki on chemical etching. Goal: Measure quantizedconductance of edge modes in gap.Task II Dimensional Control of Nodal Ring Semimetal for Topological ControlPerform transport studies on 2D devices. Map surface band structure with ARPES with N. Gedik and STM with J. Hoffman. Goal: create materials platforms forinterdisciplinary study.Use best materials to make tunable devices to control nodal modes. Collaboration with B.-J. Yang to understand materials properties. Goal: Nodal line electronic devices.Navy Relevance:The goal of harnessing the emergent modes of these interfaces of topological materials represents a fundamental approach to a new energy technologies to support the ONR 312 mission of building novel computing devices and circuits. These materials and devices described herein represent a road to lossless energy transport that will become technologically relevant if their stability can be substantially improved. Demonstrating a manner to electrically control this behavior by gates will also produce dissipationless logic systems that may ultimately revolutionize data storage and manipulation in topological transistors.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 29, 2017
- Source ID
- N000141712883
Entities
People
- Joseph Checkelsky
Organizations
- Massachusetts Institute of Technology
- Office of Naval Research
- United States Navy