AlGaN-Based High Power Density mm-wave Electronics
Abstract
The objective of the proposed work is to use AlGaN-based channels to realize high breakdown and high current density mm-wave transistors. The wider band gap (> 5eV) achievable in the AlGaN system can enable significantly higher breakdown fields (up to 15 MV/cm) than possible for GaN-channel transistors. The higher breakdown field can enable higher voltage, as well as charge/current density for the same device dimensions. Therefore, at mm-wave frequency, AlGaNbased devices can have significantly higher density than achievable in current technology. The proposed work will address some of the critical materials and device challenges related to AlGaN-based transistors, and will enable the next generation of high power density mm-wave and THz electronics.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Dec 20, 2017
- Source ID
- N000141812033
Entities
People
- Siddharth Rajan
Organizations
- Office of Naval Research
- Ohio State University
- United States Navy