Perovskite Oxide Based High Power Density mm-Wave Transistors
Abstract
The objective of this proposal is to demonstrate high power density mm-wave transistors based on the perovskite oxide heterostructures. We propose epitaxial combinations of wide band gap ultrahigh dielectric constant perovskite oxides (such as Strontium Titanate) and high mobility low effective mass oxides such as Barium Stannateto realize heterostructure field effect transistors. The proposed work will lead to knowledge about material growth, heterostructure and transport properties, and mm-wave device performance of perovskite based oxide transistors. The effort is expected to lead to mm-wave transistors with power and density significantly superior to the stateof- art, and enable applications in military and commercial systems.kite Oxide Based High Power Density mm-Wave Transistors
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Dec 20, 2017
- Source ID
- N000141812034
Entities
People
- Siddharth Rajan
Organizations
- Office of Naval Research
- Ohio State University
- United States Navy