Fin based Structures for Increasing Linearity in GaN Transistors
Abstract
This project aims to perform fundamental research on the use of fin~based GaN transistor structures to improve the power density and linearity of electronics. Two different structures will be studied: lateral fin~based high electron mobility transistors and vertical fin RF transistors.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 26, 2018
- Source ID
- N000141812177
Entities
People
- Tomás Palacios
Organizations
- Massachusetts Institute of Technology
- Office of Naval Research
- United States Navy