Theory of Transport in Semiconductor Devices
Abstract
ABSTRACT:In modern electronic devices the mobility of electrons is principally determined by their interaction with the polar optical phonon modes of the semiconductor crystal. Phonons are generally modelled as bulk modes or as confined modes via the Dielectric Continuum (DC) model. The DC model is reliable for wider quantum wells but for narrow wells in the presence of dispersion; a large contribution is made by the interface mode to the total scattering rate. Thus one has to use a more sophisticated model which takes into account the resultant hybridization of lattice modes in the presence of lattice dispersion. This hybrid model provides the physical phonon modes that can be probed by experiment.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 10, 2018
- Source ID
- N000141812463
Entities
People
- Angela Dyson
Organizations
- Newcastle University
- Office of Naval Research
- United States Navy