Development of 200A-20KV GaN diodes for high power application
Abstract
Vertical GaN devices are ideal for high power applications owing to their wide bandgaporiginatedmaterial properties, similar to SiC. What makes GaN vertical devices moreattractive than SiC, is the capability to offer bulk regions with electron mobility over1200cm2/V??sec. Due to higher carrier mobility made possible by superior growthtechniques, the figure of merit offered by GaN diodes or FETs is higher compared to SiCcounterparts. From TCAD drift diffusion simulation we have shown the advantage ofGaN devices become rapidly significant over SiC diodes at higher voltages. A GaNCAVET is only 0.4% more efficient compared to a SiC MOSFET but at 8KV, owing tothe higher bulk (electron) mobility the GaN device efficiency is over 7.4%, which islargely significant. However, the high voltage (>1KV) space is yet to be explored inGaN. Systematic research is warranted to understand the potential of GaN, which startswith a robust growth program to develop GaN epi to attain high voltage (> 5kV) p-ndiodes, thereby making it a competitive technology. The lack of bulk GaN substrateslimited the possibilities of kilovolt device classes that are typical in Si and SiCtechnologies.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 27, 2018
- Source ID
- N000141812569
Entities
People
- Srabanti Chowdhury
Organizations
- Office of Naval Research
- United States Navy
- University of California, Davis