Engineering high-temperature superconductivity in semiconductor-based interfaces and heterostructures
Abstract
The discovery of enhanced superconductivity in ultrathin films of FeSe grown on oxidesubstrates has created a new pathway to high-temperature superconductivity through interfaceengineering. The successful integration of this discovery into scalable devices and wiretechnologies requires that we incorporate such interfaces into bulk heterostructures. With thismotivation, we propose a research program aimed at 1) identifying new superconducting interfacesin ultrathin film superconductors grown on different families of oxide and semiconductingsubstrates; 2) developing the capability to simultaneously optimize the critical current densities inthe interfacial superconductors by manipulating the interface characteristics; and 3) advance theseinterfacial platforms towards practical devices by integrating them into bulk semiconductorheterostructures. We will accomplish these goals by combining advanced growth andcharacterization capabilities with state-of-the-art theoretical modeling. The integration of theseinterfaces into semiconductor platforms will create unprecedented opportunities to exploit thequantum properties of superconductors. With the existing fabrication capabilities in thesemiconducting industry, the success of this proposal will readily facilitate the development ofnew technologies such as superconducting wires beyond the existing 2G wires.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 27, 2018
- Source ID
- N000141812675
Entities
People
- Hanno Weitering
Organizations
- Office of Naval Research
- United States Navy
- University of Tennessee