Highly-Perfect BaSnO3 Thin Films for Electronic Devices
Abstract
The objective of the proposed project is significantly advance the performance of thin films of a novel family of wide band gap semiconductors, the perovskite stannates, which are of interest for future use in rf and power devices. Towards this goal, a comprehensive approach is proposed that focuses on reducing extended and point defect densities that exist in currently available materialsand to advance the understanding of the electronic and transport properties that will ultimately allow for proper engineering of mm wave devices with extreme charge densities. One major approach involves developing single crystals of these materials that will be used as substrates for improved epitaxial growth. Furthermore, systematic growth studies, advanced structural characterization techniques and density functional theory will, in combination with transportstudies, address issues such as inherent nonstoichiometry. To accomplish these goals, a multi-PI approach is proposed that combines expertise in transport, devices, film growth, single crystal synthesis, and theory.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 27, 2018
- Source ID
- N000141812704
Entities
People
- Susanne Stemmer
Organizations
- Office of Naval Research
- United States Navy
- University of California, Santa Barbara