BUGGED (Bottom-Up Graphene Nanoribbons for Next-Generation Electronic Devices)
Abstract
Title: BUGGED (Bottom-Up Graphene Nanoribbons for Next-Generation Electronic Devices)Objective: The overall goal of this project is the on-surface synthesis of atomically precise graphene nanoribbons with deterministically defined electronic properties and their use as active material in functional devices. The project aims at transforming recent and ongoing findings of GNR science into a GNR-based technology in order tounlock the unique diversity of accessible electronic properties of GNRs for real-world applications.Approach:Recent GNR device-related achievements clearly indicate areas where substantial device improvements can be expected. Within this project we will mainly focus on the synthesis of optimized GNR materials by growingnovel low band gap GNRs, improving their length, and optimizing growth and transfer protocols in order to reproducibly achieve optimum device characteristics. New approaches will have to be developed for thefabrication of devices based on ZGNRs. We will pursue the approach of (temporarily) passivating the edges by controlled chemical modifications and by considering reconstructed edges that intrinsically lower edge reactivity so that ZGNRs can be handled under ambient conditions and integrated into prototypical devices.SOW:The project are broken down into the following tasks:1: Synthesis of low-bandgap GNRsTask 1.1 On-surface synthesis of novel low-bandgap GNRsTask 1.2 Growth protocol optimization with respect to increased GNR length and minimum defect density2: Growth and transfer of aligned GNRsTask 2.1 Coverage-controlled growth of uniaxially aligned GNRs on vicinal Au substratesTask 2.2 Optimization of the electrochemical delamination transfer for coverage-controlled transfer of aligned GNRs3: Fabrication and characterization of high-performance GNR-FETsTask 3.1 Realization of short-channel 5-AGNR FETs with metal bowtie electrodesTask 3.2 Fabrication and characterization of FET devices with independently gated graphene electrodesTask 3.3 Fabrication and characterization of FETs with contacts optimized for low band gap GNRs4: Exploration of ZGNR device integrationTask 4.1 Development of efficient capping strategies for reversible protection of zigzag edgesTask 4.2 Synthesis of ZGNRs with controlled edge extensions and reconstructions for reduced reactivityTask 4.3 Set-up of UHV suitcase for transfer of ZGNRs to glove box with inert gas environmentTask 4.4 Fabrication and characterization of first ZGNR-based devices
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 04, 2018
- Source ID
- N000141812708
Entities
People
- Roman Fasel
Organizations
- Office of Naval Research
- Swiss Federal Laboratories for Materials Science and Technology
- United States Navy