Material advantages of AlGaN/GaN High Electron Mobility Transistors (HEMTs) for high power high frequency applications
Abstract
The success of AlGaN/GaN high electron mobility transistors (HEMTs) for high power highfrequency applications has generated research into other wide band gap semiconductor materials. The goal of the research is to develop a new wide band gap semiconductor material systems that one day will replace AlGaN/GaN HEMTs for high power high frequency applications. Many of the wide band gap semiconductors being researched have either poor low field mobility, poorthermal conductivity or cannot produce a heterojunction. Much of the justification for the research into these other wide band gap semiconductor technologies stems from their high Johnson Figure of Merit which depends only on saturation velocity and breakdown field. A study of wide band gap semiconductor materials for high frequency high power applications from a material perspective will be performed. Johnson???s figure of merit will be the starting point for the comparison with additional important properties required for high power and high frequency also being analyzed such as thermal properties, heterojunctions, and low field transport. The goal of the this study will be to identify the additional material properties that are needed for the next generation high power high frequency semiconductor material system that will replace AlGaN/GaN HEMTs. By defining the requirements for future materials systems that are targeting high power high frequency applications, some materials systems may be ruled out and funding can be focused on demonstrating key requirements for the remaining semiconductors.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 27, 2018
- Source ID
- N000141812709
Entities
People
- Robert Coffie
Organizations
- Office of Naval Research
- United States Navy