Monolithically Integrated Terahertz Optoelectronics through III-V Quantum Well Structures
Abstract
Abstract:The objective of the proposed research is development of high-performance monolithically integrated terahertz optoelectronic devices, for the first time. Toward this goal, we plan to conduct fundamental studies on III-V quantum well (QW) structures that offer the required specifications for realizing both optical oscillators and photoconductive antennas. Specifically, we plan to investigate III-V quantum well structures that provide efficient stimulated emission and quantum-confinement Stark shift at the same optical wavelength ranges. This enables realizing high-performance optical oscillators and amplifiers through controlling an applied injection current, as well as high-performance phase modulators, intensity modulators, and photoconductive antennas through controlling an applied bias voltage. The main thrusts of the proposed research are as follows: Thrust 1: Integrated Optical Oscillators and Amplifiers on III-V QW Substrates. The research tasks in this thrust, which will be conducted at USC under supervision of Prof. Mercedeh Khajavikhan, include (I) Conduct fundamental studies on parity-time (PT) symmetric optical oscillators realized using the III-V QW structures for pumping the monolithically-integrated photoconductive terahertz sources and detectors. (II) Investigate fundamental physical limitations for output power, efficiency, linewidth, beat frequency tunability and stability for the PT symmetric optical oscillators used for pumping the monolithically-integrated photoconductive terahertz sources and detectors. Thrust 2: Monolithically-Integrated Photoconductive Terahertz Sources and Detectors on III-V QW Substrates. The research tasks in this thrust, which will be conducted at UCLA under supervision of Prof. Jarrahi, include (I) Conduct fundamental studies on the impact of the geometry of the QW structures on the quantum efficiency and speed of the photoconductive antennas. Specifically, we will investigate geometries that enable optical confinement in nanoscale photo-absorbing semiconductor regions with sub-picosecond photo-carrier transport times to the photoconductor contact electrodes, while minimizing the capacitive loading to the terahertz antenna. This enables realizing high-power photoconductive terahertz radiation sources and high-sensitivity photoconductive terahertz detectors monolithically integrated with the optical pump oscillator. (II) Investigate fundamental physical limitations for optical-to-terahertz conversion efficiency, radiation power, and radiation bandwidth for photoconductive terahertz sources, as well as the fundamental physical limitations for terahertz-to-RF conversion gain, noise temperature, and bandwidth for photoconductive terahertz detectors realized through the III-V QW structures. The proposed research results in the development of single-chip terahertz optoelectronics for generation, detection, and spatial/spectral manipulation of terahertz waves through a scalable, compact, and low-cost platform for the first time. Therefore, the outcomes of the proposed research would enable a technological revolution in terahertz communication, imaging, and sensing systems similar to the RF integrated system platforms that revolutionized RF technology over the last three decades.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 23, 2019
- Source ID
- N000141912052
Entities
People
- Mona Jarrahi
Organizations
- Office of Naval Research
- United States Navy
- University of California, Los Angeles