Cryogenic Spin Torque MRAM Device and Circuit Research and Development
Abstract
Abstract: This proposal requests support for a research program focused on the further development of three-terminal cryogenic spin torque devices and small circuits based on the spin Hall effect (CSHE devices and circuits). The goal is to compellingly demonstrate that CSHE device technology is both the best available and a highly viable candidate for implementation in high performance cryogenic magnetic memory that can be successfully used in conjunction with Josephson digital electronics. The proposed research will build on and extend the results of the current ONR supported research project, Grant No: N00014-15-1-2449, that has successfully developed new and improved thin film materials with enhanced spin Hall effects that provide superior energy and current efficiency of any known spintronics device. With these advances we have recently demonstrated highly reliable switching with ultra-fast current pulses, achieving for example, write error rates below 1 in 105 with 200 ps pulses; record setting performance for any spin transfer torque device. With a very strong materials base now established, the proposed research will concentrate principally on: (a) Reducing the critical current for ~ 1 ns pulse switching of CSHE 3T-MTJ devices to as low a value as possible, with the goal being less than 50 ~A; (b) Reducing the write impedance of the CSHE device to ~ 200 ~, preferably less; (c) Determining the effect of CSHE device density, and of CSHE nanopillar size and shape variations on switching speed and on the distribution of device switching currents; (d) Demonstrating the operation of a two-cell CSHE memory array.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 24, 2019
- Source ID
- N000141912143
Entities
People
- Robert A. Buhrman
Organizations
- Cornell University
- Office of Naval Research
- United States Navy