Development of Medium Voltage SiC MOSFETs Integrated with SiC Schottky Diodes
Abstract
ABSTRACT: There is a pressing and urgent need to create a second source of domestic high voltage devices and modules to encourage lower prices in the commercial marketplace and help the adoption of high voltage devices in Medium voltage systems in the US Navy ships and commercial applications such as variable speed drives for electric motor and utility systems. This project proposes to achieve the following objectives:a. Develop 12 kV/20 A SiC MOSFET chips on 150 mm 4H-SiC substrates in a Commercial foundry. The MOSFETs will be integrated with Schottky diodes to save chip area, achieve better performance and eliminate the body diode induced instabilities.b. Complete set of tests on 12 kV/20 A die/discrete-package including avalancheruggedness, short-circuit time, safe operating area etc. will be conducted leading to a commercial spec-sheet. A home-built package will be used for these purposes. In addition, reliability tests such as HTRB, HTGB, and body diode stability will be conducted to adjust the design/process for ruggedness and manufacturability.c. SPICE models for 12 kV/20 A MOSFETs will be developed to accompany the specsheet. This will help accelerate the adoption.d. Dr. Robert Stahlbush at the Naval Research Laboratory has agreed to help us evaluate the thick epi-layers from various sources with regards to various defects and lifetime.e. Many domestic Graduate students will be trained in all the aspects related to this development.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 23, 2019
- Source ID
- N000141912210
Entities
People
- Woongje Sung
Organizations
- Office of Naval Research
- Research Foundation for the State University of New York
- United States Navy