Characterization of Boron Semiconductors by Neutron Irradiation and Neutron Radiography
Abstract
Characterization of Boron Semiconductors by Neutron Irradiation and Neutron Radiography: The development of boron semiconductors could provide a new power source for Naval sensor system by directly converting neutrons into charge. These novel systems could be deployed in various environments and provide a robust and continuous power source. In addition, this same technology would allow for self-powered neutron detectors that can operate in numerous deployed environments with low Size, Weight, and Power (SWaP) requirements. In this work, we will explore the use of nuclear analytical techniques [specifically prompt gamma-ray activation analysis (PGAA) and neutron radiography] to aid in the development of boron semiconductors. We will use the neutron beam facilities at the University of Texas Nuclear Engineering Teaching Laboratory (UT-NETL) to perform PGAA, neutron radiography, and as acalibrated neutron source for performance testing devices. The proposed approach is innovative in that we are considering a complete boron semiconductor and not a silicon based semiconductor with boron carbide as a layering. This has an enormous increase in potential efficiency. We also are utilizing sophisticated analytical techniques to measure the elementalcomposition and performance characteristics of the devices and feeding those results directly back into the device development. This will lead to a faster development of the device and material and provide immediate understanding of device performance.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jun 13, 2019
- Source ID
- N000141912432
Entities
People
- William Charlton
Organizations
- Office of Naval Research
- United States Navy
- University of Texas at Austin