N-Polar Nitride Vertical devices for RF application
Abstract
ABSTRACT:With the success of CAVETs demonstrating dispersion-less output characteristics, and a blocking field over 1MV-per-cm without use of any field plates, vertical device technology is considered to be a promising one, mostly for power electronics. Over the last 10 years several landmarks have been achieved in power switching performances. However, not enough research has been focused on RF performance where vertical devices can lead to enhancement of dispersion-less voltage swing and therefore more dispersion-less Watts-per-square mm. It is well recognized that dispersion is in large part mitigated in vertical devices since the maximum electric field is buried within the device(a low trap density region) and not at the surface (a high trap density region) as is typical in a lateral device. The PI and her team have repeatedly dispersion-less behavior and >1MV-per-cm blocking field in power CAVETs.The technology is now extended to offer RF transistors with higher power addedefficiency. The proposed effort builds on a decade of pioneering work on N-polar GaN done by UCSB and PI~s work on vertical GaN devices. Our goal under this program, is to extend this exceptional performance, only achieved with N-polar GaN lateral device (HEMTs) to a vertical CAVET to attain higher dispersion-less Watts per square mm.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 20, 2019
- Source ID
- N000141912611
Entities
People
- Srabanti Chowdhury
Organizations
- Office of Naval Research
- Stanford University
- United States Navy