Molecular Beam Epitaxy System for Topological Quantum Materials
Abstract
Over the past five years, research programs at UCSB in topological materials have grown at a rapid pace. Many of these research activities are central to DoD funded projects and all support graduate student education and training. These research programs require thin film growth of topological materials that offer the best possible control over growth modes, purity, epitaxy, and allow for low densities of point defects. Towards this goal, the acquisition of a versatile, state-of-the-art molecular beam epitaxy (MBE) system is proposed, which will allow for the growth of thin films and heterostructures of topological semimetals and their applications in high-speed electronic devices, spintronics, and topological superconductors. Research for these applications will be significantly advanced by high-quality, pure materials and the atomic layer control afforded by MBE. In particular, such heterostructures allow for engineering topological states and forrevealing the unique, intrinsic properties of these materials, many of which have only been discovered recently. Graduate students and postdoctoral scholars will be the primary ~hands-on~ users of the proposed MBE system, which will be the focus of many Ph.D. dissertations. The proposed MBE will be operated within a shared MBE facility, impacting a wide range of interdisciplinary research programs at UCSB and at collaborating institutions. The proposed MBE system will significantly expand the opportunities that are offered through internships toundergraduate students.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 30, 2019
- Source ID
- N000141912668
Entities
People
- Susanne Stemmer
Organizations
- Office of Naval Research
- United States Navy
- University of California, Santa Barbara