Zero DC Power RF Switches Based on Atomically-thin Nanomaterials
Abstract
Abstract:Radio-frequency (RF) switches are pervasive in military communication, connectivity and radar systems. They play a central role in establishing links for secure communication, real-time tracking for radar and reconnaissance, and reconfigurability for efficient spectrum usage. However, present RF switch technology based on diode devices or transistors have several limitations. Firstly, diodes and transistors are volatile devices, meaning they consume power continuously and hence, not ideal for mobile platforms and payloads that are powered by a battery pack. Secondly, they are performance limited owing to trade-offs in different performance metrics typically related to signal loss, bandwidth, switching speed, and power handling. Here, we propose a new RF switch technology based on atomically-thin materials that go beyond the current state-of-the-art in DoD systems. These new RF switches are based on the recent discovery of memory effect phenomenon in atomic materials such as h-BN, and can be integrated on virtually any substrate or platform. The new switches are non-volatile, therefore, they are energyefficient, only consuming power during switching events with zero static power consumption. For this reason, this memory-based RF switches are sometimes called zero-power switches. They new switches offer many performance benefits including frequency bandwidth beyond 100GHz, nanosecond switching speeds, and low-voltage operation. Compared to other emerging RF switch devices such as phase-change memory switches that require an integrated heater, the atomic switches provide superior performance in terms of bandwidth, switching speed, and are heater-free, which is of great importance for energy-efficiency and practical use case scenarios. Two major areas of improvement for the atomic RF switches are power handling and linearity. Preliminary results over that last two years have resulted in 10dB increase in power handling owing to increased understanding and engineering of the device structure. This methodology provides a rationale design route for further improvements in power handling. Towards this goal, the research effort is organized into three tasks: i) Research to improve the power handling beyond 30dBm, ii) Two-tone linearity studies and optimization, and iii) RF circuit demonstration of a switching system operating at mm-wave frequencies. Preliminary and prior results provide credibility for the proposed effort with a high likelihood for success.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 09, 2020
- Source ID
- N000142012104
Entities
People
- Deji Akinwande
Organizations
- Office of Naval Research
- United States Navy
- University of Texas at Austin