All Nitride NbN/AlN/NbN Josephson Junctions

Abstract

Recent collaboration between Cornell and Naval Research Lab has created robust epitaxial superconductor/III-Nitride semiconductors o"n 3"" wafers. An opportunity has arisen to leverage this exciting advance in materials to create clean, atomically sharp, and high te"mperature annealable Josephson Junctions and explore their device applications, particularly in high coherence superconducting quantum computing. Here we propose a joint effort between experts in superconducting devices (Hong Tang) and III-Nitride materials (Debdeep Jena) to advance device technology based on all-Nitride Josephson junctions (NJJ). Specifically, we will focus on improving the coherence of NJJs for superconducting qubits and advance qubit operating frequency and temperatures. The epitaxial control of III-V semiconductor heterointerfaces has enabled ultrahigh speed transistors, resonant tunneling diodes, and quantum cascade lasers whose properties are simply inaccessible in polycrystalline materials. Today s most advanced superconducting devices are all based on JJ with oxide barrier sandwiched by amorphous superconductors. If successful, this program will create high quality all-nitride, oxygen-free superconducting platform and transform the state-of-the-art superconducting devices.

Document Details

Document Type
DoD Grant Award
Publication Date
Feb 17, 2020
Source ID
N000142012126

Entities

People

  • Hongxing Tang

Organizations

  • Office of Naval Research
  • United States Navy
  • Yale University

Tags

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Superconducting Magnet Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots