Study of hot-electron phenomena and reliability physics in scaled N-polar and Ga-polar GaN HEMTs
Abstract
ABSTRACT:The aim of this proposal is to carry out a study of hot electron effects in scaled Gapolar and Nitrogen-polar GaN-based HEMTs and to carry out a preliminary evaluation of failure modes and mechanisms of N-polar GaN HEMT. Focus of this study will be the evaluation of hot carrier effects and potential failure mechanisms related with the increase of electric field consequent to device scaling. The study will be based on a wide number of DC, pulsed and RF on-wafer tests, carried out at various bias points in on- off- and semi-on operation, with the aim of identifying the role of temperature, electric field, hot carriers, indetermining limits to device performance and reliability. Accelerated testing will be coupled with physical failure analysis, based on electroluminescence, photoluminescence, photocurrent and other microscopy and spectroscopy techniques. Results will represent the basis for a possible more extended, industrial-level, evaluation of the reliability of N-polar millimeter-wave HEMTs.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 29, 2020
- Source ID
- N000142012177
Entities
People
- E. Zanoni
Organizations
- Office of Naval Research
- United States Navy
- University of Padua