Metal Organic Chemical Vapor Deposition of Group III - Nitrides at High Temperature and High Growth Rate
Abstract
Metal Organic Chemical Vapor Deposition of Group III - Nitrides at High Temperature and High Growth RateVertical GaN devices are ideal for high power applications owing to their wide bandgap originated material properties, similar to SiC. What makes III-nitride material system (of which GaN is a part) extremely attractive is the capability to offer even wider bandgap (> 3.4eV) material system through its alloys, such as AlGaN. This suggests the possibility to develop materials for devices which can block 20 kV and higher for very power application. The electron mobility in bulk GaN has reached 1200 cm2/Vsec., after many years of improvement of GaN substrates and the material growth technology. Thick GaN and AlGaN growth requires systematic research and accessibility to the new growth technology. In this proposal, the Department of Electrical Engineering at the Stanford University requests funds to purchase equipment for growth of III-nitrides for high power and high frequency electronics. The proposed instrumentation will fill a void in our growth capabilities at Stanford and enable crucial advances in our research. High temperature Metal Organic Chemical Vapor Deposition (MOCVD) is our chosen approach to achieve high growth rate, controlled doping scheme and low carbon in III-nitride material. Procurement of this equipment will greatly enhance current research capabilities and will result in considerable savings in time and money immediately. The proposed equipment will integrate with existing facilities to provide unique opportunities for training students in all phases of materials, device and circuit technology. The impact on several ongoing DOD research programs is remarkable.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 20, 2020
- Source ID
- N000142012363
Entities
People
- Srabanti Chowdhury
Organizations
- Office of Naval Research
- Stanford University
- United States Navy