Controlled Nucleation and Crystal Growth of Hexagonal Boron Nitride Single Crystals
Abstract
Title: Controlled Nucleation and Crystal Growth of Hexagonal Boron Nitride Single CrystalsThe proposed project will develop a process to produce large area, high structural quality, low residual impurity concentration hBN single crystals. Two specific, related goals will be addressed in the crystal growth of hBN from molten metal solutions. (a) Single crystals will be produced by eliminating the causes of nucleation that lead to the formation of polycrystallinematerial. The effects of solvent (Ni, Cr, Fe, and Co), boron source (hBN or boron + nitrogen), distribution of source materials during growth, crucible type, and the furnace temperature distribution on the crystals size, shape, and defect density will be established. (b) The influence of residual (carbon and oxygen) and intentionally added impurities (carbon and silicon) on the resulting crystals growth habit, impurity concentrations, and optical properties will bedetermined. Knowing the factors that influence the growth of hBN single crystals will make producing large hBN crystals of exceptional quality feasible. To maximize the impact of this project, these crystals will be shared with researchers throughout the world, for their studies on the properties and device applications of hBN.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 08, 2020
- Source ID
- N000142012474
Entities
People
- James H Edgar
Organizations
- Kansas State University
- Office of Naval Research
- United States Navy