Lasing Materials for Quantum Communication and Photonic Integrated Circuits
Abstract
Silicons indirect band gap limits the realization of photonic devices in the visible and near-IR regime. In addition, to date, there is no scalable, silicon-compatible laser available. Alloying of tin (Sn) and germanium (Ge) leads to a change of the bandgap from indirect to direct in the formed alloy, which subsequently enables light emission. Due to their compatibility with silicon, Ge-SN alloys could be critical players in the realization of integrated photonic circuits on Si. However, in bulk, the alloys segregate in the constitutive elements, germanium, and tin. To circumvent this problem, alloying the two elements at the nanoscale, will be employed to demonstrate light emission in Ge-Sn printed devices, an ultimately, demonstrate lasers fabricated with Ge-Sn Nanocrystals. Alloying at the nanoscale was proved feasible, but the methods of the fabrication require harsh conditions, including very hazardous chemical reagents. The objectives of this project are to 1. Demonstrate germanium-tin nanocrystals with desired characteristics, through a scalable and non-hazardous method; 2. Demonstrate patterned thin-films fabricated with the high purity germanium-tin nanocrystals; and 3. Integrate germanium-tin nanocrystals in light emission and lasing structures that could be used in photonic integrated circuits and devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jun 17, 2020
- Source ID
- N000142012539
Entities
People
- Daniela R Radu
Organizations
- Florida International University
- Office of Naval Research
- United States Navy