Broadband High Efficiency Amplifiers with GaN Device Technology
Abstract
Military currently deploys high power radio frequency (RF) linear amplifiers with vacuum tube technology for operations at the high frequency (HF) range mainly due to their advantages in linearity and power dissipation characteristics. These characteristics make vacuum tube-based power amplifiers preferred over solid state based amplifiers for high power and linearity applications in the field by military. However, the recent developments in GaN device technologyimproves the linearity and power dissipation characteristics of solid-state devices drastically and make them a viable replacement for vacuum tube based amplifiers. The addition of several other superior characteristic properties of solid-state devices such as low profile, portability, and low cost give scientists ability to research amplifier topologies and configurations to obtain enhancedamplifier performance that can be adapted for various applications for different frequency ranges up to mmWave that ONR can benefit.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jun 17, 2020
- Source ID
- N000142012554
Entities
People
- Abdullah Eroglu
Organizations
- North Carolina Agricultural and Technical State University
- Office of Naval Research
- United States Navy