Design of Advanced Millimeter-Wave GaN MMICs in the HRL T3 Process
Abstract
This proposal addressed GaN MMIC design for millimeter-wave frequency front ends, continuing research in W-band MMIC design using the HRL T3 40-nm gate GaN on SiC process, as a part of the GaN Maturation program. After demonstrating successful power amplifiers in the T3 process, with >0.5W out output power across W-band, we propose to design a variety of W-band circuits that constitute a complete front end. Our goal is to help support military needs for high-frequency trusted and reliable millimeter-wave circuits using state-of-the-art sub-50nm III-V semiconductor technologies for reliable next generation millimeter-wave radar, electronic warfare (EW), communications, and command and control systems. We propose refinements in PA design, as well as a LNA integrated with a filter,an active circulator, switches, phase shifters and self-interference cancelation circuits in the receive path. Our group is independently working with HRL on the MECA heterogeneous integration process, and our final goal is to integrate the MMICs fabricated underthe GaN Maturation program into a MECA-packaged W-band T/R front end. Approved for Public Release
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 05, 2021
- Source ID
- N000142112391
Entities
People
- Zoya Popovic
Organizations
- Office of Naval Research
- Regents of the University of Colorado
- United States Navy