A 2D/1D composite channel N-polar GaN/InN HEMT
Abstract
Approved for public releasePreviously UCSB investigated InGaN/GaN composite channel N-polar GaN HEMTs and demonstrated that structures these could improve mobility at low charge densities, relative to an all-GaN channel. However, the mobility was not optimal at all points along a typical large-signal loadline and so there was not a significant benefit observed for large-signal performance. Inthis proposed work UCSB will extend upon that prior composite channel research. Using lessons learned from prior research UCSB willdevelop, grow, process, and test new (In,Ga)N composite channel structures and evaluate them for use in mm-wave HEMTs with an aim to improve gain at low bias current densities to improve both the efficiency and gain.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 05, 2021
- Source ID
- N000142112446
Entities
People
- Umesh Mishra
Organizations
- Office of Naval Research
- United States Navy
- University of California, Santa Barbara