Acquisition of an MBE module for the synthesis of 2D chalcogenide materials
Abstract
Quantum materials and quantum information science (including quantum computing and quantum cryptography) are widely expected to transform our technological infrastructure and may have vast ramifications for the global economy and national security. Quantum materials can be loosely defined as materials where the motion of electrons in the material is strongly correlated, resulting in, e.g., quantum-coherent frictionless electrical conductivity or superconductivity, and/or materials where electrons propagate with very high mobility along the edges of a material that is otherwise electrically insulating. Both phenomena are macroscopic manifestations of the quantum mechanical principles that govern the propagation of individual electrons. Technologicalapplications are expected to be transformative and profound. This field is moving incredibly fast and there is a serious concern that the US may be losing the competition with other developed countries, including China, in its pursuit of quantum technologies. Materials synthesis and design is at the heart of these developments.With this proposal, we are requesting funds for the construction of a molecular beam epitaxy (MBE) apparatus and the acquisition of various MBE paraphernalia for the synthesis of novel chalcogenide superconductor interfaces and hetero-structure devices. MBE is the most advanced growth technique for synthesizing artificially-structured single-crystalline films with atomically abrupt interfaces and atomically precise control of thickness and composition. The proposed chalcogenide MBE module will be integrated with an existing system at the University of Tennessee (UT) for metal-oxide MBE, low-temperature scanning tunneling microscopy (LTSTM), and angle-resolved photoemission (ARPES). The latter two analytical techniques enable imaging of individual atoms and measuring the relevant quantum states in thin film materialsgrown by MBE. The combined system will be the workhorse for the production and investigations of high-temperature superconducting interfaces and hetero-structures under an active ONR grant by UT investigators Steven Johnston, Norman Mannella, and lead-principal investigator Hanno Weitering (Award No. N00014-18-1-2675). The acquisition of the MBE growth module will greatly enhance sample quality, throughput and reproducibility, and accelerate the investigations.In addition, it will enable synthesis of two-dimensional (2D) superconducting materials from refractory metal elements. The latter capability opens up other avenues of research that are currently of great interest to the DOD, such as the development of topological materials platforms for fault-tolerant quantum computing. The combined capabilities of oxide MBE, chalcogenide MBE, LT-STM and ARPES, all accessible within a single interconnected ultrahigh vacuum (UHV) system, will be unique in the US. This facility will furthermore provide excellent training opportunities for a new generation of scientists.They will acquire much needed expertise in advanced materials synthesis, and meanwhile develop excellent skills for operating high-tech instrumentation for sophisticated materials characterization. These young scientists will thus be in control of materials innovation and ensuing scientific discovery. They will be ideally poised to spearhead the materials revolution for future quantum technologies.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 05, 2021
- Source ID
- N000142112657
Entities
People
- Harm Weitering
Organizations
- Office of Naval Research
- United States Navy
- University of Tennessee