D-Band Filters Based on SiC Substrate-Integrated Waveguides
Abstract
Research Problem It has been challenging for a filter 1) to perform well above 110 GHz, 2) to be small, light and low-cost, and 3) to be compatible for monolithic integration with other electronic devices to control aggravated parasitics at such high frequencies .Research Objectives To demonstrate a D-band (110170 GHz) filter with high performance, small size, light weight, low cost, and c ompatibility for monolithic integration with GaN HEMTs in the future. The performance goals for the filter are 1-dB insertion loss, 20-dB return loss, 40-dB selectivity, and 10% bandwidth.Technical Approaches The proposed effort is based on filters that we have demonstrated on 100-m-thick SiC substrate-integrated waveguides (SIW). We will improve the SIW filter mainly by 1) improving metall ization to further reduce the SIW loss, 2) adding more poles to sharpen the selectivity, 3) synthesizing a transmission zero to impr ove the above-band rejection, 4) codesigning the filter with the transitionto the grounded coplanar waveguide (GCPW) to further supp ress higher-order modes while reducing overall size and loss, and 5) exploring different resonator topologies from the inline series layout.Anticipated Outcome Demonstration for a D-band (110170 GHz) filter based on SiC SIW with 1-dB insertion loss, 20-dB retur n loss, 40-dB selectivity, and 10% bandwidth. Approaches and understandings leading to the demonstrated performance will be document ed and published.Impact on DoD Capabilities The proposed effort will contribute to the Navys mission in information and spectrum dominance. It is highly relevant to ONRs thrust in electronics, sensors and network research to enable new and innovative use of th e electromagnetic spectrum in support of the Navy and Marine Corps mission. It will impact the areas of surveillance, communications and networking, electronic warfare, navigation, and electronics. It will help reduce the size, weight, and cost of transmit and rec eive systems for adaptive persistent surveillance and active-aperture phased arrays capable of performing multiple functions simulta neously.The proposed filter will help reduce the noise of radio-frequency sensors as well as their vulnerability to jamming or cosit e interference. The SiC-based filter can be monolithically integrated with wide-bandgap semiconductors such as GaN for high-power, l ow-noise, and high-speed electronic devices and circuits in surveillance, electronic warfare, multifunctional RF systems and commun ications. The SIW-based approach developed under the proposed effort can be extended beyond the D-band to submillimeter-wave and ter ahertz frequencies in the future.The proposed approach will allow GaN HEMTs to be integrated with high-quality filters and high-effi ciency antennas on the same SiC chip, which has been difficult for conventional MMICs based on coplanar or microstrip transmission l ines.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 20, 2021
- Source ID
- N000142112680
Entities
People
- James C. M. Hwang
Organizations
- Cornell University
- Office of Naval Research
- United States Navy