Glove-Box-Integrated Sputtering and Evaporation for Air-Free Physical Vapor Deposition

Abstract

This proposal is for the acquisition of a dual-physical vapor deposition (PVD) system that is integrated into an inert-atmosphere gl ove box. This instrument is needed because it will allow for the deposition of air-sensitive materials onto air-sensitive and/or oxi de-free substrates, which will substantially impact multiple DoD-funded projects. The instrument features a thermal evaporation cham ber and a sputtering chamber, and it has the capability to deposit thin films of a wide variety of materials, including air-sensitiv e alkali metals, high-melting point metals, oxides, nitrides, and others. Both chambers are integrated into an argon-containing glov e box, which allows for source material insertion, sample preparation, and maintenance to be performed under an inert environment. T he inert atmosphere significantly reduces contamination from H2O and O2. This PVD system provides capabilities beyond the variety of shared sputtering and evaporation instruments on Georgia Techs campus, none of which feature inert gas enclosure and therefore can only deposit a limited range of materials. This system will thus considerably improve the capabilities for material sample preparat ion at Georgia Tech, and it will propel the research efforts of multiple research groups in novel directions. The PVD system will en able scientific advances in two ongoing DoD projects, other federally-funded research projects, and future projects to be proposed t o the DoD. This includes ONR project no. N00014-19-1-2195, in which the glove-boxintegrated PVD system will be used i) to create at omically-pristine interfaces between layered chalcogenide materials and pure contact metals (Cu, Ag, Sc) that are not possible with conventional systems, enabling investigation of interfacial transformations, and ii) to deposit alkali metal films to characterize the dynamics of intercalation of alkali ions into layered chalcogenides. These efforts will lead to unprecedented understanding of the dynamic behavior of layered chalcogenide materials for use in electronic and energy devices. AFOSR project no. FA9550-17-1-0130 will utilize this equipment to precisely control the thickness of deposited lithium films on top of other metal foils. This will al low for the low-temperature formation and processing of alloys between lithium and other metals for the formation of a wide variety of porous metals with controlled pore size and architecture, with important applications as electronic interconnects, radiation shi elding, and lightweight structural elements. Finally, this equipment will impact current federally-funded projects, as well as futur e proposed research to the DoD, that are focused on the development and understanding of solid-state batteries with improved safety and energy density compared to current battery systems. Beyond impacting these research efforts, this instrument will provide oppor tunities for graduate students and other trainees to participate in cutting-edge materials research, and it will prepare them to pur sue careers at the intersection of materials science and electronics/energy device engineering. In addition, students will be expose d to problems of interest to the DoD, which will enable them to contribute to the DoD research mission throughout their careers.

Document Details

Document Type
DoD Grant Award
Publication Date
Oct 22, 2021
Source ID
N000142112942

Entities

People

  • Matthew T McDowell

Organizations

  • Georgia Tech Research Corporation
  • Office of Naval Research
  • United States Navy

Tags

Fields of Study

  • Materials science

Readers

  • Research Science/Academic Research
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene