III-Nitride High-Frequency Selective Injection Heterojunction Bipolar Transistors
Abstract
The objective of the proposed work is to realize a novel selective injection bipolar transistor (SIBT) that can enable high Johnson,s Figure of Merit and high power density bipolar transistors based on the III-Nitride material system. Bipolar junction transistors(,BJTs and HBTs) offer a path to overcome several challenges relevant to DoD applications. However, the performance of GaN bipolar jun,ction transistors is still far from the theoretical limit due to issues related to the p-type doped base. In the proposed project, a, new device architecture for GaN HBTs which involves tailoring the structure of the p-type base layer to minimize current crowding w,hile retaining good RF performance will be explored. The proposed selective-injection bipolar transistor (SIBT) can solve long-stand,ing challenges in the area of GaN bipolar transistors by through the use of a selective-injection base concept that enables simultan,eously high current and power gain. The project will aim to demonstrate III-Nitride heterojunction bipolar transistors with maximum, oscillation frequency greater than 150 GHz, with current density > 200 kA/cm2 and breakdown voltage > 150 V. If successful, the pro,posed bipolar transistors could enable enable vertical high frequency transistors with distinct advantages over the current state-of,-art lateral AlGaN/GaN HEMT technology.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 05, 2022
- Source ID
- N000142212260
Entities
People
- Siddharth Rajan
Organizations
- Office of Naval Research
- Ohio State University
- United States Navy