Programmable Atomic Assembly of Oxides Quantum Systems Using Molecular Beam Epitaxy
Abstract
Scalable creation of long-lived quantum bits (qubits) and devices to interconnect these qubits constitutes a centraltheme in quantum, information science, the success of which is poised to revolutionize computing, data analytics, material and pharmaceutical discove,ries. Current state-of-the-art superconducting quantum circuits triumph over other platforms because of their wafer-scale production, where qubits and devices are patterned lithographically with mature circuit fabrication technologies. On the otherhand, atom-like s,olid-state spins are an appealing system that simultaneously possesses long coherence times and accessible opticaltransitions, while, allowing for chip-scale integration with other quantum systems including photons, microwaves and acoustic phonons. In particular, r,are-earth ions in solids feature numerous 4f- intra-shell transitions that are effectively shielded from their crystalline environme,nt by closed outer shells, allowing for long spin coherence times (up to 6 hours in Eu:Y2SiO5) and narrow opticaltransitions (<100 H,z in Er:Y2SiO5) when doped into high-quality oxide hosts. Yet, the lack of a scalable synthesis technique for such high-performance, qubits imposes severe limitations on their further development as a fundamental building block of quantum information technologies., Here we propose to establish an oxide molecular beam epitaxy (OMBE) growth facility with in-situ micro/nano patterning capability a,t the University of Chicago, to accelerate the development of this new solid-state qubit technology based on rare-earth ions doped i,n epitaxial oxide films on wafer substrates. The thin film oxide host matrix grown layer-by-layer using molecularbeam epitaxy offers, the highest possible crystalline quality and allows unprecedented control over dopants atomic placement, concentration and surface, proximities for optimal qubit performance with designer characteristics.Capitalizing on the unique in-situ printing technique pione,ered by our team, the proposed OMBE instrument will enable the team to rapidly prototype new concepts of quantumdevices for quantum, network nodes and optical-microwave quantum transductions. The metrics of these new quantum systems would not be achievable with co,nventional bulk crystals or existing material integration techniques. Beyond quantum technologies, this facilitywill generate multip,licative impacts on fundamental sciences by enabling the study of new forms of matter based on heterostructuresbetween oxides, semi-,metals and superconductors. Combining oxychalcogenide films with silicon photonic crystal cavities, new phasesof quantum matter driv,en by light can be created and harnessed for realizing Chern insulators and interfacial superconductors. Moreover, the team will als,o leverage this OMBEs in-situ nano-printing capability to create quantum systems consisting of a few to many-body interacting rare-,earth qubits as a testbed for quantum material simulation and probing dynamic phase transitions.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 01, 2022
- Source ID
- N000142212281
Entities
People
- Tian Zhong
Organizations
- Office of Naval Research
- United States Navy
- University of Chicago