Enhanced MOCVD capabilities for enabling ultra-high power N-polar GaN-based transistors
Abstract
Office of Naval Research- Program Officer: Dr. Paul Maki- Department: Code 312; PUBLICLY RELEASABLE This project involves the acqui,sition of new components as well as an upgrade of aging components equipment for one of the metal organic chemical vapor deposition, (MOCVD) systems at the University of California Santa Barbara (UCSB). This equipment is to be used for the epitaxial growth of N-po,lar GaN-based materials in order to advance the frontier of advanced electronics devices. The upgraded MOCVD system will incorporate, (i) an in-situ stress measurement for real time curvature and growth rate measurements, and (ii) a robust control system allowing e,fficient mixing of Group-III and Group-V and growth of III-Nitrides and in-situ oxides. This facility will serve as a resource cent,er for the broad community of researchers at UCSB working in the field of III-Nitride materials and devices. It will enhance educati,on, training, and research opportunities for graduate and undergraduate students from the Electrical Engineering and Materials Scien,ce Engineering departments. The research enabled by this equipment will develop ultra-high-power N-polar GaN-based transistors in th,em m-wave and RF frequencies that will ensure efficient solid-state power amplification and circuits to replace bulky vacuum tubes f,or next-generation wireless networks.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 01, 2022
- Source ID
- N000142212301
Entities
People
- Steven P. DenBaars
Organizations
- Office of Naval Research
- United States Navy
- University of California, Santa Barbara